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| ON Semiconductor ) PNP Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. 2N6107 2N6109 * 2N6111 2N6288 NPN * DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC = 3.0 Adc -- 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc -- All Devices Collector-Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) -- 2N6111, 2N6288 = 50 Vdc (Min) -- 2N6109 = 70 Vdc (Min) -- 2N6107, 2N6292 High Current Gain -- Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc -- 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc -- 2N6107, 09, 11 TO-220AB Compact Package * 2N6292* *ON Semiconductor Preferred Device * * 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30-50-70 VOLTS 40 WATTS II II IIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II II I II II I I II I I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I I I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6111 2N6288 30 40 2N6109 50 60 2N6107 2N6292 70 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 7.0 10 3.0 Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 40 0.32 Watts W/_C _C TJ, Tstg -65 to +150 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 3.125 _C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 5 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating http://onsemi.com 2 II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Small-Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. (2) fT = |hfe| * ftest. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 2.5 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 7.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) Characteristic 2N6107 2N6109 2N6111 2N6288 2N6292 http://onsemi.com 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6288, 92 2N6107, 09, 11 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICEX Cob hFE hfe fT Min 4.0 10 30 30 30 2.3 20 30 50 70 -- -- -- -- -- -- -- -- -- -- -- -- -- Max 250 150 150 150 -- 100 100 100 2.0 2.0 2.0 3.0 3.5 1.0 1.0 1.0 1.0 -- -- -- -- -- -- mAdc mAdc mAdc Adc MHz Unit Vdc Vdc Vdc pF -- -- 3 2N6107 2N6109 2N6111 2N6288 2N6292 VCC +30 V 25 s +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB 51 D1 RC SCOPE t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.07 0.1 TJ = 25C VCC = 30 V IC/IB = 10 tr td @ VBE(off) 5.0 V RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 0.2 0.3 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 7.0 Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZJC(t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPS) 15 10 0.5 ms dc 0.1 ms 7.0 5.0 3.0 2.0 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 2.0 3.0 20 30 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.7 0.5 5.0 ms 0.3 0.2 0.15 1.0 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area http://onsemi.com 4 2N6107 2N6109 2N6111 2N6288 2N6292 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.07 0.1 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 300 200 C, CAPACITANCE (pF) Cib 100 70 50 30 0.5 Cob TJ = 25C t, TIME ( s) tr 0.2 1.0 0.3 0.5 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 1.0 10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 5 2N6107 2N6109 2N6111 2N6288 2N6292 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 6 2N6107 2N6109 2N6111 2N6288 2N6292 Notes http://onsemi.com 7 2N6107 2N6109 2N6111 2N6288 2N6292 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6107/D |
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